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- [32] SOME PROPERTIES OF TERNARY COMPOUND GAAS1-XPX DOPED WITH SELENIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 19 - &
- [38] ENHANCEMENT OF MINORITY-CARRIER LIFETIME IN GAAS1-XPX(X=0.4,0.65) BY NITROGEN IMPLANTATION APPLIED PHYSICS, 1981, 24 (01): : 1 - 5
- [39] SOME PROPERTIES OF TERNARY COMPOUND GAAS1-XPX DOPED WITH TELLURIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (01): : 56 - +