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ENHANCEMENT OF MINORITY-CARRIER LIFETIME IN GAAS1-XPX(X=0.4,0.65) BY NITROGEN IMPLANTATION
被引:0
|
作者
:
TAKAI, M
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST FESTKORPERTECHNOL,PAUL GERHARDT ALLEE 42,D-8000 MUNCHEN 60,FED REP GER
FRAUNHOFER INST FESTKORPERTECHNOL,PAUL GERHARDT ALLEE 42,D-8000 MUNCHEN 60,FED REP GER
TAKAI, M
[
1
]
RYSSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST FESTKORPERTECHNOL,PAUL GERHARDT ALLEE 42,D-8000 MUNCHEN 60,FED REP GER
FRAUNHOFER INST FESTKORPERTECHNOL,PAUL GERHARDT ALLEE 42,D-8000 MUNCHEN 60,FED REP GER
RYSSEL, H
[
1
]
机构
:
[1]
FRAUNHOFER INST FESTKORPERTECHNOL,PAUL GERHARDT ALLEE 42,D-8000 MUNCHEN 60,FED REP GER
来源
:
APPLIED PHYSICS
|
1981年
/ 24卷
/ 01期
关键词
:
D O I
:
10.1007/BF00900387
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1 / 5
页数:5
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NITROGEN IMPLANTATION IN GAAS1-XPX(X=0.4-0.65)
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MEASUREMENT OF MINORITY-CARRIER LIFETIME IN GAAS AND GAAS1-XPX WITH AN INTENSITY-MODULATED ELECTRON-BEAM
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[3]
ROOM-TEMPERATURE MINORITY-CARRIER LIFETIME AND EFFICIENCY OF P-TYPE GAAS1-XPX
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[4]
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[5]
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