ELECTRONIC STATES IN LATERAL-SURFACE-SUPERLATTICE QUANTUM-WELL WIRES

被引：7
|
作者：
DENG, ZY
SUN, H
GU, SW
机构：
[1] SHANGHAI JIAO TONG UNIV,DEPT PHYS,SHANGHAI 200030,PEOPLES R CHINA
[2] SHANGHAI JIAO TONG UNIV,DEPT APPL PHYS,SHANGHAI 200030,PEOPLES R CHINA
[3] CHINA CTR ADV SCI & TECHNOL,WORLD LAB,CTR THEORET PHYS,BEIJING 100080,PEOPLES R CHINA
[4] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA
[5] SHANGHAI JIAO TONG UNIV,INST CONDENSED MATTER PHYS,SHANGHAI 200030,PEOPLES R CHINA
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1992年 / 4卷 / 31期
关键词：
D O I：
10.1088/0953-8984/4/31/007
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Energy minigaps caused by lateral-surface structures in quasi-one-dimensional quantum well wires are calculated using the variational and degenerate-perturbational approaches for GaAs/AlAs wires. By a coordinate transformation, the structured interfaces of the wires are transformed into planar ones so that the boundary conditions of the electronic wave functions can be satisfied exactly on the interfaces. The dependences of the energy minigaps on the lateral-surface structures are discussed.
引用
收藏
页码：6549 / 6554
页数：6
相关论文
共 50 条
  • [41] Modeling noise in superlattice quantum-well infrared photodetectorsL
    Fernandes, F. M.
    Claro, M. S.
    da Silva, E. C. F.
    Quivy, A. A.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (38)
  • [42] Electronic coupling of quantum-well states in double Ag nanofilm structures
    Tanaka, A
    Takahashi, K
    Sasaki, H
    Gondo, W
    Suzuki, S
    Sato, S
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2003, 72 (04) : 879 - 883
  • [43] Density of electronic states in impurity-doped quantum well wires
    Betancur, FJ
    Orozco, EA
    Gonzalez, JD
    Mikhailov, ID
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (09): : 1833 - 1837
  • [44] Density of electronic states in impurity-doped quantum well wires
    Sierra-Ortega, J
    Mikhailov, ID
    Betancur, FJ
    PHYSICA B-CONDENSED MATTER, 2004, 348 (1-4) : 66 - 72
  • [45] ELECTRONIC STATES OF SEMICONDUCTOR-METAL-SEMICONDUCTOR QUANTUM-WELL STRUCTURES
    HUBERMAN, ML
    MASERJIAN, J
    PHYSICAL REVIEW B, 1988, 37 (15): : 9065 - 9068
  • [46] A LATERAL-SURFACE-SUPERLATTICE STRUCTURE ON GAAS/ALGAAS FOR FAR-INFRARED AND MAGNETOCAPACITANCE MEASUREMENTS
    ISMAIL, K
    ANTONIADIS, DA
    SMITH, HI
    LIU, CT
    NAKAMURA, K
    TSUI, DC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 2000 - 2002
  • [47] Silicon quantum wires on Ag(110):: Fermi surface and quantum well states
    Valbuena, M. A.
    Avila, J.
    Davila, M. E.
    Leandri, C.
    Aufray, B.
    Le Lay, G.
    Asensio, M. C.
    APPLIED SURFACE SCIENCE, 2007, 254 (01) : 50 - 54
  • [48] ELECTRONIC AND SHALLOW DONOR IMPURITY STATES IN GAAS-GA1-XALXAS QUANTUM-WELL WIRES - EFFECTS OF DIELECTRIC MISMATCH
    DENG, ZY
    LAI, TR
    GUO, JK
    GU, SW
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7389 - 7393
  • [49] Biexciton binding energy in parabolic quantum-well wires
    Zhang, Hong
    Shen, Man
    Liu, Jian-Jun
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (04)
  • [50] Biexciton binding energy in parabolic quantum-well wires
    Zhang, Hong
    Shen, Man
    Liu, Jian-Jun
    Journal of Applied Physics, 2008, 103 (04):
12345