ELECTRONIC STATES IN LATERAL-SURFACE-SUPERLATTICE QUANTUM-WELL WIRES

被引：7
|
作者：
DENG, ZY
SUN, H
GU, SW
机构：
[1] SHANGHAI JIAO TONG UNIV,DEPT PHYS,SHANGHAI 200030,PEOPLES R CHINA
[2] SHANGHAI JIAO TONG UNIV,DEPT APPL PHYS,SHANGHAI 200030,PEOPLES R CHINA
[3] CHINA CTR ADV SCI & TECHNOL,WORLD LAB,CTR THEORET PHYS,BEIJING 100080,PEOPLES R CHINA
[4] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA
[5] SHANGHAI JIAO TONG UNIV,INST CONDENSED MATTER PHYS,SHANGHAI 200030,PEOPLES R CHINA
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1992年 / 4卷 / 31期
关键词：
D O I：
10.1088/0953-8984/4/31/007
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Energy minigaps caused by lateral-surface structures in quasi-one-dimensional quantum well wires are calculated using the variational and degenerate-perturbational approaches for GaAs/AlAs wires. By a coordinate transformation, the structured interfaces of the wires are transformed into planar ones so that the boundary conditions of the electronic wave functions can be satisfied exactly on the interfaces. The dependences of the energy minigaps on the lateral-surface structures are discussed.
引用
收藏
页码：6549 / 6554
页数：6
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