INFLUENCE OF LASER ANNEALING REGIMES ON ELECTRICAL CHARACTERISTICS OF IMPLANTED SILICON LAYERS

被引：2
|
作者：
KHAIBULLIN, IB
SHTYRKOV, EI
ZARIPOV, MM
BAYAZITOV, RM
AGANOV, RV
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 49卷 / 1-3期
关键词：
D O I：
10.1080/00337578008243063
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：33 / 38
页数：6
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