SYSTEMATICS OF THE ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE

被引：0
|
作者：
ANDERSON, CL [1 ]
机构：
[1] HUGHES RES LABS,MALIBU,CA 90265
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C384 / C384
页数：1
相关论文
共 50 条
  • [41] REACTIVE ION ETCHING OF GALLIUM-ARSENIDE
    AVTIUSHKOV, AP
    LABUNOV, VA
    STEKOLNIKOV, AF
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 496 - 499
  • [42] Characterization of electroluminescent structures based on gallium arsenide ion-implanted with ytterbium and oxygen
    D. W. Palmer
    V. A. Dravin
    V. M. Konnov
    E. A. Bobrova
    N. N. Loiko
    S. G. Chernook
    A. A. Gippius
    Semiconductors, 2001, 35 : 325 - 330
  • [43] ION-IMPLANTATION INTO GALLIUM-ARSENIDE
    ANHOLT, R
    BALASINGAM, P
    CHOU, SY
    SIGMON, TW
    DEAL, M
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3429 - 3438
  • [44] Characterization of electroluminescent structures based on gallium arsenide ion-implanted with ytterbium and oxygen
    Palmer, DW
    Dravin, VA
    Konnov, VM
    Bobrova, EA
    Loiko, NN
    Chernook, SG
    Gippius, AA
    SEMICONDUCTORS, 2001, 35 (03) : 325 - 330
  • [45] MICROTWIN FORMATION IN GALLIUM-ARSENIDE BY IRON-ION IMPLANTATION AND AMORPHIZATION BY ANNEALING
    TANIWAKI, M
    YOSHIIE, T
    KOIDE, H
    ICHIHASHI, M
    YOSHIMOTO, N
    YOSHIDA, H
    HAYASHI, Y
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) : 161 - 164
  • [46] SURFACE SEGREGATION OF ALKALINE IMPURITIES IMPLANTED IN GALLIUM-ARSENIDE
    ALEXANDRE, F
    JOURNAL DE PHYSIQUE, 1978, 39 (06): : 701 - 710
  • [47] DAMAGE RANGES FOR IMPLANTED HYDROGEN ISOTOPES IN GALLIUM-ARSENIDE
    STEEPLES, K
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4087 - 4089
  • [48] PHOTOLUMINESCENCE OF NEODYMIUM-IMPLANTED GALLIUM-PHOSPHIDE AND GALLIUM-ARSENIDE
    MULLER, HD
    ENNEN, H
    SCHNEIDER, J
    AXMANN, A
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2210 - 2212
  • [49] PHOTOLUMINESCENCE OF ACCEPTOR STATES IN MERCURY IMPLANTED GALLIUM-ARSENIDE
    GILLIN, WP
    SEALY, BJ
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) : 2021 - 2022
  • [50] EPITAXIAL REGROWTH OF IMPLANTED AMORPHOUS LAYERS ON GALLIUM-ARSENIDE
    WILLIAMS, JS
    AUSTIN, MW
    HARRISON, HB
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C344 - C344
12345