OPTIMIZATION OF DOPED SILICON AND GERMANIUM THERMISTORS

被引:2
|
作者
MCCAMMON, D [1 ]
CUI, W [1 ]
JUDA, M [1 ]
ZHANG, JH [1 ]
KELLEY, R [1 ]
MOSELEY, H [1 ]
STAHLE, C [1 ]
SZYMKOWIAK, A [1 ]
机构
[1] NASA,GODDARD SPACE FLIGHT CTR,CODE 666,GREENBELT,MD 20771
关键词
63.20; Kr; 72.20; Ht; 78.20; Cw; 95.55; Ka;
D O I
10.1007/BF00693434
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have tested a variety of ion-implanted silicon thermistors and a much smaller selection of nuclear transmutation doped germanium devices over a wide range of temperatures and power densities. A small number of melt-doped silicon and germanium devices have also been tested, but these usually show evidence for small-scale doping inhomogeneities that make their behavior unpredictable and generally less desirable for cryogenic detectors. The behavior of the thermistors falls into fairly simple and predictable patterns. Many of these are not readily explained in terms of current theory, but empirical descriptions permit predictions of thermistor behavior and optimization of the design for best performance in a particular situation. Both silicon and germanium thermistors show strong non-ohmic effects that severely limit the performance of these devices at low temperatures. This most directly affects the maximum speed of detectors employing them, and appears to limit the response time of detectors operating at 100 mK to the order of 1 ms. We have also observed excess low-frequency noise in both types of thermistor that appears to be an intrinsic property of the bulk material, since it scales as the square root of the device volume. We have not yet determined how this noise varies with doping density or temperature, but it appears that this phenomenon has a significant effect on detector performance, and will need to be taken into account in an optimum design. The material for this talk was taken entirely from the following two papers: J. Zhang, W. Cui, M. Juda, D. McCammon, R. Kelley, H. Moseley, C. Stahle, and A. Szymkowiak, "Hopping Conduction in Partially Compensated Doped Silicon," Phys. Rev. B48, 2312 (1993) J. Zhang, W. Cui, M. Juda, D. McCammon, R. Kelley, H. Moseley, C. Stahle, and A. Szymkowiak, "Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium: .05 - 1 Kelvin," Phys. Rev. B (submitted) (1993/94) This research is supported by NASA grants NAG5-629 and NAG5-679. © 1993 Plenum Publishing Corporation.
引用
收藏
页码:287 / 287
页数:1
相关论文
共 50 条
  • [31] PARAMAGNETIC STATES IN DOPED AMORPHOUS-SILICON AND GERMANIUM
    STUTZMANN, M
    STUKE, J
    SOLID STATE COMMUNICATIONS, 1983, 47 (08) : 635 - 639
  • [32] Germanium nanocrystal doped inverse crystalline silicon opal
    Seino, Makoto
    Henderson, Eric J.
    Puzzo, Daniel P.
    Kadota, Naoki
    Ozin, Geoffrey A.
    JOURNAL OF MATERIALS CHEMISTRY, 2011, 21 (40) : 15895 - 15898
  • [33] GENERATION OF THERMAL DONORS IN GERMANIUM-DOPED SILICON
    BABITSKII, YM
    GORBACHEVA, NI
    GRINSHTEIN, PM
    ILIN, MA
    MILVIDSKII, MG
    TUROVSKII, BM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (07): : 818 - 819
  • [34] Reactions between point defects in silicon doped with germanium
    Khirunenko, LI
    Shakhovtsov, VI
    Shumov, VV
    Yashnik, VI
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1381 - 1384
  • [35] INTERFACE PROPERTIES OF OXIDIZED GERMANIUM-DOPED SILICON
    NEUGROSCHEL, A
    MARGALIT, S
    BARLEV, A
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (13) : 1606 - 1621
  • [36] Germanium-doped Czochralski silicon for photovoltaic applications
    Wang, Peng
    Yu, Xuegong
    Chen, Peng
    Li, Xiaoqiang
    Yang, Deren
    Chen, Xue
    Huang, Zhenfei
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (08) : 2466 - 2470
  • [37] THE PROPERTIES OF GALLIUM-ARSENIDE DOUBLY DOPED WITH SILICON AND GERMANIUM OR SILICON AND TIN
    BROZEL, MR
    LAITHWAITE, K
    NEWMAN, RC
    OZBAY, B
    JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 619 - 624
  • [38] THEORETICAL OPTIMIZATION OF THERMOELECTRIC FIGURE OF MERIT OF HEAVILY DOPED HOT-PRESSED GERMANIUM-SILICON ALLOYS
    ROWE, DM
    JOURNAL OF PHYSICS F-METAL PHYSICS, 1974, 7 (13): : 1843 - 1846
  • [39] THERMAL-CONDUCTIVITY OF GERMANIUM DOPED WITH SILICON, TIN, AND ALUMINUM
    BAKHCHIEVA, SR
    KEKELIDZE, NP
    KEKUA, MG
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 83 (01): : 139 - 145
  • [40] Investigation of intrinsic gettering for germanium doped Czochralski silicon wafer
    Chen, Jiahe
    Yang, Deren
    Ma, Xiangyang
    Wang, Weiyan
    Zeng, Yuheng
    Que, Duanlin
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)