OPTIMIZATION OF DOPED SILICON AND GERMANIUM THERMISTORS

被引:2
|
作者
MCCAMMON, D [1 ]
CUI, W [1 ]
JUDA, M [1 ]
ZHANG, JH [1 ]
KELLEY, R [1 ]
MOSELEY, H [1 ]
STAHLE, C [1 ]
SZYMKOWIAK, A [1 ]
机构
[1] NASA,GODDARD SPACE FLIGHT CTR,CODE 666,GREENBELT,MD 20771
关键词
63.20; Kr; 72.20; Ht; 78.20; Cw; 95.55; Ka;
D O I
10.1007/BF00693434
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have tested a variety of ion-implanted silicon thermistors and a much smaller selection of nuclear transmutation doped germanium devices over a wide range of temperatures and power densities. A small number of melt-doped silicon and germanium devices have also been tested, but these usually show evidence for small-scale doping inhomogeneities that make their behavior unpredictable and generally less desirable for cryogenic detectors. The behavior of the thermistors falls into fairly simple and predictable patterns. Many of these are not readily explained in terms of current theory, but empirical descriptions permit predictions of thermistor behavior and optimization of the design for best performance in a particular situation. Both silicon and germanium thermistors show strong non-ohmic effects that severely limit the performance of these devices at low temperatures. This most directly affects the maximum speed of detectors employing them, and appears to limit the response time of detectors operating at 100 mK to the order of 1 ms. We have also observed excess low-frequency noise in both types of thermistor that appears to be an intrinsic property of the bulk material, since it scales as the square root of the device volume. We have not yet determined how this noise varies with doping density or temperature, but it appears that this phenomenon has a significant effect on detector performance, and will need to be taken into account in an optimum design. The material for this talk was taken entirely from the following two papers: J. Zhang, W. Cui, M. Juda, D. McCammon, R. Kelley, H. Moseley, C. Stahle, and A. Szymkowiak, "Hopping Conduction in Partially Compensated Doped Silicon," Phys. Rev. B48, 2312 (1993) J. Zhang, W. Cui, M. Juda, D. McCammon, R. Kelley, H. Moseley, C. Stahle, and A. Szymkowiak, "Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium: .05 - 1 Kelvin," Phys. Rev. B (submitted) (1993/94) This research is supported by NASA grants NAG5-629 and NAG5-679. © 1993 Plenum Publishing Corporation.
引用
收藏
页码:287 / 287
页数:1
相关论文
共 50 条
  • [21] Diffusion and precipitation of oxygen in silicon doped with germanium
    Khirunenko, LI
    Shakhovtsov, VI
    Shumov, VV
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1767 - 1771
  • [22] Bandwidth optimization of germanium-doped silicon optical modulator for high-speed applications
    Mishra, Darpan
    Minz, Manoranjan
    Sonkar, Ramesh Kumar
    Khan, Mohd. Mansoor
    NANOPHOTONICS AND MICRO/NANO OPTICS V, 2019, 11193
  • [24] THERMAL-DEFECT FORMATION IN SILICON DOPED WITH GERMANIUM
    BRINKEVICH, DI
    GORBACHEVA, NI
    PETROV, VV
    PROSOLOVICH, VS
    TUROVSKII, BM
    INORGANIC MATERIALS, 1989, 25 (08) : 1161 - 1163
  • [25] GERMANIUM-DOPED SILICON SINGLE-CRYSTALS
    LEVSHIN, ES
    PUZANOV, NI
    SUKHAREVA, IS
    EIDENZON, AM
    INORGANIC MATERIALS, 1988, 24 (05) : 593 - 598
  • [26] FEATURES OF THE ABSORPTION-SPECTRA OF SILICON DOPED WITH GERMANIUM
    KUZNETSOV, VP
    ILIN, MA
    GORBACHEVA, NI
    INORGANIC MATERIALS, 1984, 20 (11) : 1545 - 1547
  • [27] Reactions between point defects in silicon doped with germanium
    Khirunenko, L.I.
    Shakhovtsov, V.I.
    Shumov, V.V.
    Yashnik, V.I.
    Materials Science Forum, 1995, 196-201 (pt 3): : 1381 - 1384
  • [28] METAL-INSULATOR TRANSITIONS IN DOPED SILICON AND GERMANIUM
    DASILVA, AF
    PHYSICAL REVIEW B, 1988, 37 (09) : 4799 - 4800
  • [29] Origin of noise in two dimensionally doped Silicon and Germanium
    Shamim, Saquib
    Mahapatra, Suddhasatta
    Scappucci, Giordano
    Polley, Craig
    Simmons, Michelle Y.
    Ghosh, Arindam
    PHYSICS OF SEMICONDUCTORS, 2013, 1566 : 413 - +
  • [30] ULTRASONIC WAVE PROPAGATION IN PURE AND DOPED SILICON AND GERMANIUM
    MASON, WP
    BATEMAN, TB
    IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1964, SU11 (02): : 108 - &