SIMPLE ANALYSIS OF CARRIER TRANSPORT AND BUILDUP IN SEPARATE-CONFINEMENT HETEROSTRUCTURE QUANTUM-WELL LASERS

被引：7
|
作者：
ALAM, M
LUNDSTROM, M
机构：
[1] Department of Electrical Engineering, Purdue University, West Lafayette, IN
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 12期
关键词：
D O I：
10.1109/68.392225
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple, analytical model for carrier transport and buildup in the separate confinement layer of a quantum well laser is developed. The time constant characterizing the low-frequency roll-off is separated into components describing electron and hole transport and components related to the charge storage effects arising from electron and hole capture, In contrast to previous work, the analysis shows that both the transport and capture-related delays are sensitive to the placement of the well within the separate confinement heterostructure and that the carrier concentrations change abruptly across the quantum well.
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页码：1418 / 1420
页数：3
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