共 50 条
- [1] DOUBLE-HETEROSTRUCTURE SEPARATE-CONFINEMENT (IN, GA, AL)AS LASERS EMITTING AT A WAVELENGTH OF 1.1 MU-M AND CHARACTERIZED BY AN (IN, GA)AS STRESSED QUANTUM-WELL CONFINED BY A SHORT-PERIOD SUPERLATTICE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (02): : 221 - 222
- [3] ULTRALOW THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM WELL (AL,GA)AS LASERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 689 - 691
- [6] DOUBLE-HETEROSTRUCTURE SEPARATE-CONFINEMENT (AL, GA)AS LASERS EMITTING AT 0.8 MU-M (175 A/CM2) AND 0.73 MU-M (350 A/CM2) AND CHARACTERIZED BY A DOPED QUANTUM-WELL [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 122 - 123
- [8] CARRIER-INDUCED LOCALIZATION IN IN-GA-AS/IN-GA-AS-P SEPARATE-CONFINEMENT QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW B, 1993, 48 (20): : 15175 - 15181