共 50 条
- [13] QUANTUM-WELL INGAASP/INP SEPARATE-CONFINEMENT DOUBLE HETEROSTRUCTURE LASERS EMITTING AT LAMBDA=1.3 MU (JTH=410 A/CM2, T= 23-DEGREES-C) [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 503 - 506
- [15] QUANTUM-WELL SEPARATE-CONFINEMENT INGAASP GAAS DOUBLE-HETEROSTRUCTURE LASER PREPARED BY LIQUID EPITAXY (LAMBDA=0.79-MU,ITH=124 A/CM2, T=300-K) [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (01): : 98 - 100
- [16] EXPERIMENTAL AND THEORETICAL INVESTIGATIONS OF SINGULARITIES OF THE THRESHOLD AND POWER CHARACTERISTICS OF INGAASP/INP SEPARATE-CONFINEMENT DOUBLE-HETEROSTRUCTURE LASERS (LAMBDA = 1.3 MU-M) [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (05): : 560 - 564
- [19] High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures [J]. Semiconductors, 2009, 43 : 1602 - 1605
- [20] CONTINUOUS-WAVE SEPARATE-CONFINEMENT INGAASP GAASP DOUBLE-HETEROSTRUCTURE INJECTION-LASERS FABRICATED BY LIQUID EPITAXY AND EMITTING AT THE 0.677-MU-WAVELENGTH [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 683 - 685