A novel separate lateral confinement quantum-well heterostructure laser

被引:2
|
作者
Swint, RB [1 ]
Woo, CY
Huber, AE
Roh, SD
Coleman, JJ
Faircloth, BO
Zediker, MS
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Nuvonyx Inc, Bridgeton, MO 63044 USA
基金
美国国家科学基金会;
关键词
buried heterostructure; InGaAs laser; lateral mode; ridge waveguide;
D O I
10.1109/68.980465
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Utilizing separate structures for the lateral confinement of the optical mode and injected carriers, we optimize the overlap of the optical mode with the gain to demonstrate lasers with lower threshold currents than standard ridge waveguide lasers.
引用
收藏
页码:134 / 136
页数:3
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