CHARACTERISTICS OF PARA-TYPE SILICON PHOTORESISTORS COMPENSATED WITH RADIATION CENTERS

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作者：

KOLESNIKOV, NV

ROZANOV, YN

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1978年 / 12卷 / 05期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：572 / 573

页数：2

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