CHARACTERISTICS OF PARA-TYPE SILICON PHOTORESISTORS COMPENSATED WITH RADIATION CENTERS

被引：0
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作者：
KOLESNIKOV, NV
ROZANOV, YN
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1978年 / 12卷 / 05期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：572 / 573
页数：2
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