INSITU MONITORING OF SURFACE KINETICS IN GAAS ATOMIC LAYER EPITAXY BY SURFACE PHOTOABSORPTION METHOD

被引：21
|
作者：
KOUKITU, A
IKEDA, H
SUZUKI, H
SEKI, H
机构：
[1] Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期
关键词：
ATOMIC LAYER EPITAXY (ALE); HALOGEN TRANSPORT ALE; SURFACE PHOTOABSORPTION (SPA); INSITU MONITORING; GAAS;
D O I：
10.1143/JJAP.30.L1712
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The epitaxial growth reactions that proceed on the substrate surface during halogen transport atomic layer epitaxy (ALE) are observed directly with a surface photo-absorption method. The heat of desorption (48.5 kcal/mol) is obtained from the reflective intensity change. The value agrees well with the activation energy reported in classical halogen transport vapor-phase epitaxy. Based on the observation, a reaction mechanism is proposed. The self-limiting mechanism of halogen transport ALE is ascribed to the complete coverage of surface As sites by the adsorbed complex.
引用
收藏
页码：L1712 / L1714
页数：3
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