THE SURFACE-CHEMISTRY OF TRIMETHYLGALLIUM ON GAAS(100) - IMPLICATIONS FOR ATOMIC LAYER EPITAXY

被引：0
|
作者：
CREIGHTON, JR
机构：
[1] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
[2] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：31 / 31
页数：1
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