GROWTH-BEHAVIOR OF THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS

被引：0

作者：

KISHINO, S ^{[1
]}

MATSUSHITA, Y ^{[1
]}

KANAMORI, M ^{[1
]}

IIZUKA, T ^{[1
]}

机构：

[1] VLSI TECHNOL RES ASSOC,COOPERAT LABS,KAWASAKI 213,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C118 / C118

页数：1

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