INVESTIGATION OF DISTRIBUTION OF BORON ATOMS IN SILICON DOPED BY ION BOMBARDMENT

被引：0

|

作者：

ZORIN, EI

PAVLOV, PV

TETELBAU.DI

机构：

来源：

SOVIET PHYSICS SOLID STATE,USSR | 1968年 / 9卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：2874 / +

页数：1

相关论文

共 50 条

[21] Distribution of residual stresses in boron doped p(+) silicon films
Ning, XJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (10) : 3389 - 3393
[22] Anisotropic energy distribution of sputtered atoms induced by low energy heavy ion bombardment
Zhang, L
Zhang, ZL
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2005, 160 (08): : 337 - 347
[23] Angular distribution of sputtered atoms induced by low-energy heavy ion bombardment
ZHANG Lai1
1 2Department of Mathematics and Physics
Nuclear Science and Techniques, 2004, (06) : 340 - 343
[24] INVESTIGATION OF BORON-DOPED ION-IMPLANTED LAYERS IN SILICON USING THE HALL-CURRENT METHOD
ZHARKIKH, YS
LYSOCHENKO, SV
MOSKALENKO, NI
POLISHCHUK, YY
SOVIET MICROELECTRONICS, 1980, 9 (02): : 102 - 105
[25] XPS AND AUGER INVESTIGATION OF CF3+ ION-BOMBARDMENT OF SILICON
CHUANG, TJ
WINTERS, HF
COBURN, JW
APPLIED SURFACE SCIENCE, 1979, 2 (04) : 514 - 531
[26] LATTICE DISORDER IN ION-IMPLANTED BORON-DOPED SILICON
HIRVONEN, JK
EISEN, FH
APPLIED PHYSICS LETTERS, 1971, 19 (01) : 14 - &
[27] Polarization control of an infrared silicon light-emitting diode by dressed photons and analyses of the spatial distribution of doped boron atoms
Kawazoe, Tadashi
Nishioka, Katsuhiro
Ohtsu, Motoichi
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 121 (04): : 1409 - 1415
[28] DETERMINATION OF DEGREE OF IONIZATION OF BORON IN SILICON DOPED BY ION IMPLANTATION METHOD
ZORIN, EI
PAVLOV, PV
TELELBAU.DI
SHUTOV, YN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (08): : 1051 - +
[29] HALL STUDY OF SILICON LAYERS DOPED WITH PHOSPHORUS AND BORON BY ION IMPLANTATION
ZORIN, EI
PAVLOV, PV
TETELBAU.DI
KHOKHLOV, AF
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 6 (01): : 337 - +
[30] Polarization control of an infrared silicon light-emitting diode by dressed photons and analyses of the spatial distribution of doped boron atoms
Tadashi Kawazoe
Katsuhiro Nishioka
Motoichi Ohtsu
Applied Physics A, 2015, 121 : 1409 - 1415

← 1 2 3 4 5 →