共 50 条
- [1] INVESTIGATION OF DIFFUSION OF BORON IN SILICON FROM A LAYER DOPED BY ION BOMBARDMENT SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (09): : 2221 - &
- [2] INFLUENCE OF AMORPHIZATION ON DISTRIBUTION OF BORON INTRODUCED INTO SILICON BY ION-BOMBARDMENT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1325 - 1327
- [3] HALL-EFFECT INVESTIGATION OF ANNEALING OF RADIATION DEFECTS IN SILICON DOPED BY BOMBARDMENT WITH BORON IONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (05): : 656 - 657
- [4] DISTRIBUTION OF IMPLANTED ATOMS AND RADIATION DEFECTS IN ION BOMBARDMENT OF SILICON (MONTE CARLO CALCULATION METHOD) SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (09): : 2141 - +
- [6] ANGULAR-DISTRIBUTION INVESTIGATION OF SPUTTERED ATOMS OF METAL BY LOW-ENERGY ION-BOMBARDMENT IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1977, (02): : 107 - 110
- [7] Reaction Between Iron and Boron Introduced into Silicon by Ion Bombardment. 1978, 14 (04): : 610 - 613
- [8] ANOMALOUS DIFFUSION OF BORON IN SILICON DUE TO HEAVY-ION BOMBARDMENT PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (01): : 357 - 363
- [9] CONDUCTIVITY AND CARRIER DENSITY DISTRIBUTIONS IN SILICON DOPED BY ION BOMBARDMENT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (06): : 656 - +
- [10] AN INVESTIGATION OF THE DISTRIBUTION OF BORON ATOMS IN THE AGGREGATE CRYSTALS OF DIAMOND CONTAINING BORON PHYSICA B & C, 1986, 139 (1-3): : 654 - 657