A NEW METHOD FOR VAPOR-PHASE EPITAXY OF GAAS IN NITROGEN AMBIENT

被引：0
|
作者：
CHANG, CY [1 ]
GUH, KC [1 ]
WU, TS [1 ]
机构：
[1] NATL CHENG KUNG UNIV, ELECTR & ELECT ENGN RES INST, TAINAN, TAIWAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C394 / C394
页数：1
相关论文
共 50 条
  • [31] SURFACE-MORPHOLOGY OF GAAS GROWN BY VAPOR-PHASE EPITAXY
    NONOMURA, Y
    OKUNO, Y
    NISHIZAWA, J
    JOURNAL OF CRYSTAL GROWTH, 1979, 46 (06) : 795 - 800
  • [32] APPARATUS FOR STUDY OF GAAS SURFACES DURING VAPOR-PHASE EPITAXY
    THEETEN, JB
    HOTTIER, F
    PARADAN, H
    REVUE DE PHYSIQUE APPLIQUEE, 1976, 11 (05): : 587 - 595
  • [33] GROWTH-MECHANISM OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    HSU, CC
    XU, JB
    WILSON, IH
    APPLIED PHYSICS LETTERS, 1994, 64 (16) : 2105 - 2107
  • [34] ANALYSIS OF GROWTH-RATE IN GAAS VAPOR-PHASE EPITAXY
    KOMENO, J
    SHIBATOMI, A
    OHKAWA, S
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1977, 13 (04): : 111 - 121
  • [35] LASER-ASSISTED VAPOR-PHASE EPITAXY OF ZNSE ON GAAS
    KOVALENKO, AV
    MEKEKECHKO, AY
    SEMICONDUCTORS, 1995, 29 (08) : 761 - 763
  • [36] A NOVEL SELECTIVE HETEROEPITAXIAL GROWTH METHOD OF INP ON GAAS BY METALLOORGANIC VAPOR-PHASE EPITAXY
    WAKAHARA, A
    PAK, K
    SATO, T
    YONEZU, H
    YOSHIDA, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) : 1995 - 1997
  • [37] KINETICS OF GAAS CRYSTALLIZATION BY LATERAL CHLORIDE VAPOR-PHASE EPITAXY
    VLADIMIROVA, SY
    IVONIN, IV
    KATAEV, YG
    LAVRENTEVA, LG
    POROKHOVNICHENKO, LP
    KRISTALLOGRAFIYA, 1995, 40 (05): : 916 - 919
  • [38] INSITU SURFACE-ANALYSIS OF THE VAPOR-PHASE EPITAXY OF GAAS
    THEETEN, JB
    HOTTIER, F
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 450 - 460
  • [39] INFLUENCE OF THE GROWTH-PARAMETERS IN GAAS VAPOR-PHASE EPITAXY
    DURAND, JM
    PHILIPS JOURNAL OF RESEARCH, 1979, 34 (5-6) : 177 - 210
  • [40] ROLE OF VANADIUM IN ORGANOMETALLIC VAPOR-PHASE EPITAXY GROWN GAAS
    HOBSON, WS
    PEARTON, SJ
    SWAMINATHAN, V
    JORDAN, AS
    KANBER, H
    KAO, YJ
    HAEGEL, NM
    APPLIED PHYSICS LETTERS, 1989, 54 (18) : 1772 - 1774
12345