A NEW METHOD FOR VAPOR-PHASE EPITAXY OF GAAS IN NITROGEN AMBIENT

被引:0
|
作者
CHANG, CY [1 ]
GUH, KC [1 ]
WU, TS [1 ]
机构
[1] NATL CHENG KUNG UNIV, ELECTR & ELECT ENGN RES INST, TAINAN, TAIWAN
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C394 / C394
页数:1
相关论文
共 50 条
  • [21] REACTION-MECHANISM OF GAAS VAPOR-PHASE EPITAXY
    NISHIZAWA, J
    SHIMAWAKI, H
    SAKUMA, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) : 2567 - 2575
  • [22] SPIRAL GROWTH OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    HSU, CC
    LU, YC
    XU, JB
    WONG, TKS
    WILSON, IH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03): : 2115 - 2117
  • [23] Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates
    Drozdov, Yu. N.
    Kraev, S. A.
    Okhapkin, A. I.
    Daniltsev, V. M.
    Skorokhodov, E. V.
    SEMICONDUCTORS, 2020, 54 (09) : 1147 - 1149
  • [24] PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE ON GAAS
    BOUREE, JE
    HELBING, R
    KUHN, W
    GOROCHOV, O
    APPLIED SURFACE SCIENCE, 1995, 86 (1-4) : 437 - 441
  • [25] ATOMIC LAYER EPITAXY OF CDTE ON GAAS, BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    WANG, WS
    EHSANI, HE
    BHAT, IB
    JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 670 - 675
  • [26] New vanadium dopant precursor for GaAs growth by metalorganic vapor-phase epitaxy
    Rebey, A
    Bchetnia, A
    Benjeddou, C
    El Jani, B
    Gibart, P
    JOURNAL OF CRYSTAL GROWTH, 1998, 194 (3-4) : 292 - 296
  • [27] A STUDY OF HETEROEPITAXY OF INP ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    PAK, K
    WAKAHARA, A
    SATO, T
    YOSHIDA, A
    YONEZU, H
    ITOH, N
    TAKAGI, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (09) : 2358 - 2361
  • [28] CONTROLLED CARBON DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    KUECH, TF
    TISCHLER, MA
    WANG, PJ
    SCILLA, G
    POTEMSKI, R
    CARDONE, F
    APPLIED PHYSICS LETTERS, 1988, 53 (14) : 1317 - 1319
  • [29] GAAS METAL ORGANICS VAPOR-PHASE EPITAXY - RESIDUAL CARBON
    ELJANI, B
    LEROUX, M
    GRENET, JC
    GIBART, P
    JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 303 - 310
  • [30] HETEROEPITAXIAL GROWTH OF INP ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    PAK, K
    WAKAHARA, A
    SATO, T
    TAKAGI, Y
    YOSHIDA, A
    YONEZU, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : C576 - C576