LIFETIMES AND CAPTURE CROSS SECTIONS IN GOLD-DOPED SILICON

被引：44
|
作者：
DAVIS, WD
机构：
来源：
PHYSICAL REVIEW | 1959年 / 114卷 / 04期
关键词：
D O I：
10.1103/PhysRev.114.1006
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1006 / 1008
页数：3
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