SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2

被引：44
|
作者：
TASCH, AF [1 ]
HOLLOWAY, TC [1 ]
LEE, KF [1 ]
GIBBONS, JF [1 ]
机构：
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 14期
关键词：
D O I：
10.1049/el:19790312
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：435 / 437
页数：3
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