DEFECT LUMINESCENCE IN CW LASER-ANNEALED SILICON

被引：19
|
作者：
STREET, RA [1 ]
JOHNSON, NM [1 ]
GIBBONS, JF [1 ]
机构：
[1] STANFORD UNIV,STANFORD,CA 94305
来源：
JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 12期
关键词：
D O I：
10.1063/1.325962
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：8201 / 8203
页数：3
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