STIMULATION OF GASEOUS GROWTH OF EPITAXIAL LAYERS OF GAAS

被引:0
|
作者
FROLOV, IA
DRUZ, BL
BOLDYREVSKII, PB
SOKOLOV, EB
机构
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:743 / 744
页数:2
相关论文
共 50 条
  • [31] ACCEPTOR LEVELS IN GAAS EPITAXIAL LAYERS
    FEHRIBACH, J
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 463 - 463
  • [32] Defects in thick epitaxial GaAs layers
    Samic, H
    Bourgoin, JC
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 997 - 1001
  • [33] MICROWAVE OSCILLATIONS IN EPITAXIAL LAYERS OF GAAS
    HASTY, TE
    CUNNINGHAM, PA
    WISSEMAN, WR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 114 - +
  • [34] Ohmic contacts to GaAs epitaxial layers
    Kim, TJ
    Holloway, PH
    CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1997, 22 (03) : 239 - 273
  • [35] Defects in thick epitaxial GaAs layers
    Samic, H.
    Bourgoin, J.C.
    Materials Science Forum, 1997, 258-263 (pt 2): : 997 - 1001
  • [36] PHOTOCONDUCTIVE RESPONSE OF GAAS EPITAXIAL LAYERS
    ANAGNOSTAKIS, EA
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 54 (01): : 68 - 71
  • [37] OBSERVATION OF DISLOCATIONS IN GAAS EPITAXIAL LAYERS
    NISHIZAWA, J
    OYAMA, Y
    OKUNO, Y
    JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 925 - 928
  • [38] STOICHIOMETRIC EFFECTS IN GROWTH OF DOPED EPITAXIAL LAYERS OF GAAS1-XPX
    STEWART, CEE
    JOURNAL OF CRYSTAL GROWTH, 1971, 8 (03) : 259 - &
  • [39] Mechanism of GaAs transport by water reaction application to the growth of thick epitaxial layers
    M. Hammadi
    J. C. Bourgoin
    H. Samic
    Journal of Materials Science: Materials in Electronics, 1999, 10 : 399 - 402
  • [40] INFLUENCE OF METHOD OF SUBSTRATE TREATMENT ON GROWTH KINETICS AND PROPERTIES OF GAAS EPITAXIAL LAYERS
    LAVRENTEVA, LG
    POROKHOVNICHENKO, LP
    IVONIN, IV
    KRASILNI.LM
    IVANOVA, NN
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1974, (01): : 20 - +