STIMULATION OF GASEOUS GROWTH OF EPITAXIAL LAYERS OF GAAS

被引：0
|
作者：
FROLOV, IA
DRUZ, BL
BOLDYREVSKII, PB
SOKOLOV, EB
机构：
来源：
INORGANIC MATERIALS | 1977年 / 13卷 / 05期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：743 / 744
页数：2
相关论文
共 50 条
  • [21] MBE-GROWTH OF INAS AND GASB EPITAXIAL LAYERS ON GAAS SUBSTRATES
    SODERSTROM, JR
    CHOW, DH
    MCGILL, TC
    WATSON, TJ
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 409 - 414
  • [22] Molecular beam epitaxial growth of ZnSe layers on GaAs and Si substrates
    López-López, M
    Méndez-García, VH
    Meléndez-Lira, M
    Luyo-Alvarado, J
    Tamura, M
    Momose, K
    Yonezu, H
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2000, 220 (01): : 99 - 109
  • [23] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
    DILORENZO, JV
    JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +
  • [24] EPITAXIAL LAYERS OF GAAS DOPED WITH CHROMIUM
    BOLDYREVSKII, PB
    KARPOVICH, IA
    PARSHKOV, VG
    INORGANIC MATERIALS, 1983, 19 (07) : 1085 - 1087
  • [25] EPITAXIAL LAYERS ZNO ON GE AND GAAS
    SEMILETOV, SA
    RABADANO.RA
    KRISTALLOGRAFIYA, 1972, 17 (02): : 434 - +
  • [26] IMPURITY PHOTOCONDUCTIVITY IN GAAS EPITAXIAL LAYERS
    LISENKER, BS
    LISINKER, SS
    MARONCHUK, YE
    SHERSTYAKOVA, VN
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1974, (11): : 19 - 23
  • [27] STUDY OF FUNCTION LAYERS IN EPITAXIAL GAAS
    KRASILNIKOVA, LM
    IVONIN, IV
    VILISOVA, MD
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1975, (08): : 123 - &
  • [28] FACETED DEFECTS IN GAAS EPITAXIAL LAYERS
    SHAW, DW
    JOURNAL OF CRYSTAL GROWTH, 1972, 12 (03) : 249 - &
  • [29] DOPING OF GAAS EPITAXIAL LAYERS WITH OXYGEN
    MAKSIMOV, VL
    DVORETSKII, SA
    VASILEVA, LV
    SIDOROV, YG
    INORGANIC MATERIALS, 1980, 16 (06) : 657 - 660
  • [30] SOLVENT MICROINCLUSIONS IN GAAS EPITAXIAL LAYERS
    VASILENKO, ND
    GLUSHKOV, EA
    MARONCHUK, IE
    MARONCHUK, EE
    JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 354 - 358
12345