HIGH-FREQUENCY NETWORK PROPERTIES OF MOS TRANSISTORS INCLUDING SUBSTRATE RESISTIVITY EFFECTS

被引：30
|
作者：
DAS, MB
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 12期
关键词：
D O I：
10.1109/T-ED.1969.16908
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1049 / +
页数：1
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