共 50 条
- [21] CALCULATION OF CURRENT-VOLTAGE CHARACTERISTICS AND OF DEPOSITION RATE BY DIODE-SPUTTERING TECHNOLOGY [J]. VAKUUM-TECHNIK, 1978, 27 (08): : 227 - 234
- [23] CALCULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF ASYMMETRIC QUASIABRUPT P-N JUNCTIONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1780 - &
- [24] CURRENT-VOLTAGE CHARACTERISTICS OF DIODE STRUCTURES ON THE BASE OF GAAS COMPENSATED BY MN OR FE [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (10): : 79 - 95
- [26] THEORY OF STATIC CURRENT-VOLTAGE CHARACTERISTICS OF BALLISTIC METAL-INSULATOR SEMICONDUCTOR TRANSISTORS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (12): : 1378 - 1382
- [29] Effects of fabrication process on current-voltage characteristics of carbon nanotube field effect transistors [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4A): : 1599 - 1602
- [30] Interface-trap Charges on Recombination DC Current-Voltage Characteristics in MOS Transistors [J]. NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, : 869 - 872