STRONG PHOTOLUMINESCENCE FROM THE REACTION-PRODUCT OF ERBIUM AND OXYGEN ON SILICON CRYSTAL

被引：6
|
作者：
SUEZAWA, M
SUMINO, K
机构：
[1] Institute for Materials Research, Tohoku University, Sendai
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 12B期
关键词：
ERBIUM; SILICON; PHOTOLUMINESCENCE;
D O I：
10.1143/JJAP.33.L1782
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence spectra around 1.5 mum from silicon (Si) doped with erbium (Er) by various methods have been studied. The doping methods that were adopted were annealing after painting of Er(NO3)3 solutions and evaporation of Er on Si surface, and annealing of specimens in the Er vapour. Strong photoluminescence similar to that of Er2O3 was observed only from the damaged surface of n-type Czochralski-grown Si when Er was doped with the last method. Analysis of the damaged surface by the method of electron spectroscopy for chemical analysis (ESCA) showed that Er2O3 was generated on the surface of n-type Cz.Si.
引用
收藏
页码：L1782 / L1784
页数：3
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