Fiber taper collection of photoluminescence at 1.54 μm from erbium doped silicon nitride photonic crystal cavities

被引：0
|
作者：
Shambat, Gary [1 ]
Gong, Yiyang [1 ]
Lu, Jesse [1 ]
Yerci, Selcuk [2 ]
Li, Rui [2 ]
Dal Negro, Luca [2 ]
Vuckovic, Jelena [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
来源：
2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) | 2010年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence at 1.54 mu m from Er-doped silicon nitride embedded in silicon photonic crystal cavities was extracted with 2.5x greater collection efficiency compared to free space emission, with loaded Q values of up to 98% of the intrinsic Q. (C) 2010 Optical Society of America
引用
收藏
页数：2
相关论文
共 50 条
  • [1] Coupled fiber taper extraction of 1.53 μm photoluminescence from erbium doped silicon nitride photonic crystal cavities
    Shambat, Gary
    Gong, Yiyang
    Lu, Jesse
    Yerci, Selcuk
    Li, Rui
    Dal Negro, Luca
    Vuckovic, Jelena
    OPTICS EXPRESS, 2010, 18 (06): : 5964 - 5973
  • [2] Observation of Transparency of Erbium-doped Silicon nitride in photonic crystal nanobeam cavities
    Gong, Yiyang
    Makarova, Maria
    Yerci, Selcuk
    Li, Rui
    Stevens, Martin J.
    Baek, Burm
    Nam, Sae Woo
    Dal Negro, Luca
    Vuckovic, Jelena
    OPTICS EXPRESS, 2010, 18 (13): : 13863 - 13873
  • [3] Photoluminescence at 1.54 mu m in erbium-doped amorphous hydrogenated silicon
    Terukov, EI
    Kudoyarova, VK
    Mezdrogina, MM
    Golubev, VG
    Sturm, A
    Fuhs, W
    SEMICONDUCTORS, 1996, 30 (05) : 440 - 443
  • [4] Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon
    Vernon-Parry, KD
    Evans-Freeman, JH
    Hawkins, ID
    Dawson, P
    Peaker, AR
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) : 2715 - 2719
  • [5] 1.54 μm electroluminescence from erbium-doped porous silicon composites for photonic applications
    Lopez, HA
    Fauchet, PM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 182 (01): : 413 - 418
  • [6] Photoluminescence around 1.54μm wavelength from erbium-doped silicon dependence on annealing temperature
    Xu, Fei
    Xiao, Zhisong
    Cheng, Guoan
    Yi, Zhongzhen
    Zeng, Yuxin
    Zhang, Tonghe
    Gu, Lanlan
    He Jishu/Nuclear Techniques, 2002, 25 (08):
  • [7] Waveguiding and 1.54 μ m Er3+ photoluminescence properties of erbium doped silicon rich silicon oxide
    Seo, SY
    Han, HS
    Shin, JH
    THIN FILMS FOR OPTICAL WAVEGUIDE DEVICES AND MATERIALS FOR OPTICAL LIMITING, 2000, 597 : 21 - 26
  • [8] 1.54-MU-M PHOTOLUMINESCENCE OF ERBIUM-IMPLANTED SILICON
    MOUTONNET, D
    LHARIDON, H
    FAVENNEC, PN
    SALVI, M
    GAUNEAU, M
    DAVITAYA, FA
    CHROBOCZEK, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4): : 75 - 77
  • [9] The 1.54 mu m emission enhancement in silicon doped with erbium
    Onopko, DE
    Bagraev, NT
    Ryskin, AI
    TENTH FEOFILOV SYMPOSIUM ON SPECTROSCOPY OF CRYSTALS ACTIVATED BY RARE-EARTH AND TRANSITIONAL-METAL IONS, 1996, 2706 : 251 - 259
  • [10] Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals
    Gong, Yiyang
    Ishikawa, Satoshi
    Cheng, Szu-Lin
    Gunji, Marika
    Nishi, Yoshio
    Vuckovic, Jelena
    PHYSICAL REVIEW B, 2010, 81 (23)
12345