CONTACT RESISTANCE TO UNDOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON FILMS

被引：40
|
作者：
KANICKI, J
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 20期
关键词：
D O I：
10.1063/1.100330
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1943 / 1945
页数：3
相关论文
共 50 条
  • [41] Structural evolution and electronic properties of phosphorus-doped hydrogenated amorphous silicon thin films deposited by PECVD
    HE Jian
    LI Wei
    XU Rui
    QI KangCheng
    JIANG YaDong
    [J]. Science China(Technological Sciences)., 2013, 56 (01) - 108
  • [42] DEPTH PROFILE MEASUREMENTS OF ALUMINUM FILM ON PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON LAYERS BY AUGER-ELECTRON SPECTROSCOPY
    ISHIHARA, SI
    HIRAO, T
    [J]. THIN SOLID FILMS, 1987, 155 (02) : 325 - 329
  • [43] DIFFUSION AND EFFUSION ANALYSIS OF HYDROGEN IN UNDOPED HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
    LOPEZ, F
    ANDUJAR, JL
    MORENZA, JL
    GARCIACUENCA, MV
    [J]. APPLIED SURFACE SCIENCE, 1993, 70-1 : 680 - 685
  • [44] THE CONTACT RESISTANCE OF ELECTROLESS NICKEL PLATING ON PHOSPHORUS-DOPED SILICON
    EISNER, RL
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (08) : C188 - C188
  • [45] TRANSIENT PHOTOCAPACITANCE AND PHOTOCURRENT STUDIES OF UNDOPED HYDROGENATED AMORPHOUS-SILICON
    GELATOS, AV
    MAHAVADI, KK
    COHEN, JD
    HARBISON, JP
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (05) : 403 - 406
  • [46] DEFECT EQUILIBRATION AND INTRINSIC STRESS IN UNDOPED HYDROGENATED AMORPHOUS-SILICON
    KITSUNO, Y
    CHO, GS
    DREWERY, J
    HONG, WS
    PEREZMENDEZ, V
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A): : 1261 - 1267
  • [47] PHOTOELECTROCHEMICAL ANALYSIS OF DOPED HYDROGENATED AMORPHOUS-SILICON
    SPITLER, MT
    CARY, JD
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (08) : 2295 - 2299
  • [48] KINETICS OF METASTABILITY IN DOPED HYDROGENATED AMORPHOUS-SILICON
    NEBEL, CE
    STREET, RA
    JACKSON, WB
    JOHNSON, NM
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (02): : 291 - 306
  • [49] CONDUCTANCE FLUCTUATIONS IN DOPED HYDROGENATED AMORPHOUS-SILICON
    FAN, JG
    LUST, LM
    KAKALIOS, J
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 164 : 469 - 472
  • [50] CONDUCTANCE FLUCTUATIONS IN DOPED HYDROGENATED AMORPHOUS-SILICON
    PARMAN, CE
    ISRAELOFF, NE
    KAKALIOS, J
    [J]. PHYSICAL REVIEW B, 1993, 47 (19): : 12578 - 12589
12345