CONDUCTANCE FLUCTUATIONS IN DOPED HYDROGENATED AMORPHOUS-SILICON

被引：58
|
作者：
PARMAN, CE
ISRAELOFF, NE
KAKALIOS, J
机构：
[1] School of Physics and Astronomy, University of Minnesota, Minneapolis
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 19期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1103/PhysRevB.47.12578
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Conductance fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) films are described. The spectral density of the coplanar current fluctuations has a 1/f frequency dependence for frequency f from 1 < f < 10(4) Hz over the temperature range 300 < T < 450 K. The noise power density displays a power-law dependence on the dc current passing through the film, with a temperature-dependent power-law exponent. Random telegraph switching noise is observed in coplanar current measurements in samples with effective volumes of 10(-6) to 10(-7) cm3 with fluctuations as large as DELTAR/R approximately 1%. Statistical analysis of these fluctuations indicates that the 1/f noise is strongly non-Gaussian, suggestive of cooperative interactions between fluctuators. A model is proposed in which the noise is dominated by inhomogeneous current paths whose local conductivity is modulated by bonding rearrangements enabled by hydrogen motion.
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页码：12578 / 12589
页数：12
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