CONDUCTANCE-NOISE POWER FLUCTUATIONS IN HYDROGENATED AMORPHOUS-SILICON

被引：44
|
作者：
PARMAN, CE
ISRAELOFF, NE
KAKALIOS, J
机构：
[1] School of Physics and Astronomy, University of Minnesota, Minneapolis
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 07期
关键词：
D O I：
10.1103/PhysRevLett.69.1097
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The power spectra of the 1/f noise in n-type-doped hydrogenated amorphous silicon (a-Si:H) are themselves time dependent. The noise power changes both in magnitude and as a function of frequency, reflecting a modulation of the properties of the fluctuators responsible for the current noise. Slow variations of the noise are strongly correlated over a broad range of frequencies. Spectral analysis of these noise power fluctuations, termed second spectra, also shows an approximate 1/f spectral slope, that is, the 1/f noise has 1/f noise. These results indicate that highly cooperative interactions exist between the fluctuators.
引用
收藏
页码：1097 / 1100
页数：4
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