Shallow junction determination and boron profiling using electrochemical capacitance-voltage (ECV)

被引：0
|
作者：
Hashim, U. [1 ]
Bajuri, S. Niza Mohammad [1 ]
Halim, Nur Hamidah Abdul [1 ]
Majlis, Burhanudin Yeop [2 ]
机构：
[1] Univ Malaysia Perlis UniA, Inst Nano Elect Engn, Kangar 01000, Perlis, Malaysia
[2] UKM, Inst Microengn & Nanoelect, Ukm Bangi 43600, Selangor, Malaysia
来源：
JURNAL FIZIK MALAYSIA | 2009年 / 30卷 / 1-4期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A method for determining the carrier concentration profile and the depth of p-n junction boron diffusion in silicon using electrochemical capacitance-voltage (ECV) technique is studied. Boron profiles obtained show to be agreed with theoretical profiles and junction depths shows no significant differences compared to theoretical calculation. Therefore the ECV technique is found to be suitable for profiling the diffusion process and to determine the electrical junction depth.
引用
收藏
页码：37 / 41
页数：5
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