Electrical characterization of zinc oxide thin films by electrochemical capacitance-voltage profiling

被引：10

作者：

Tang, X ^{[1
]}

Clauzonnier, A ^{[1
]}

Campbell, HI ^{[1
]}

Prior, KA ^{[1
]}

Cavenett, BC ^{[1
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 16期

关键词：

D O I：

10.1063/1.1695442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of ZnO by epitaxial techniques is important for the development of new optoelectronic devices. In order to establish control over the growth, it is important to be able to measure dopant profiles through the layers to supplement Hall effect data. A standard method for many semiconductors is by electrochemical capacitance-voltage (C-V) profiling. In this letter, C-V profiles from metal organic chemical vapor deposition grown ZnO thin films are presented. It is shown that carrier density profiles can be obtained routinely and reproducibly by using 0.1 M ZnCl2. (C) 2004 American Institute of Physics.

引用

页码：3043 / 3045

页数：3

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