共 50 条
- [42] APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1327 - 1332
- [47] Temperature dependence of InGaP, InAlP, and AlGaP growth in metalorganic molecular-beam epitaxy Ozasa, Kazunari, 1600, (102): : 1 - 2
- [48] GROWTH OF III-VI COMPOUND SEMICONDUCTORS BY METALORGANIC MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2134 - L2136
- [50] GROWTH OF GAAS, ALGAAS, AND INGAAS ON (111)B GAAS BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 638 - 641