BOUND-EXCITON LUMINESCENCE ASSOCIATED WITH COBALT ACCEPTORS IN VAPOR-GROWN GAAS

被引：16

作者：

OZEKI, M

SHIBATOMI, A

OHKAWA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.326545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4823 / 4827

页数：5

共 50 条

[1] BOUND-EXCITON RECOMBINATION RADIATION IN GAAS
GILLEO, MA
BAILEY, PT
HILL, DE
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 497 - &
[2] BOUND-EXCITON LUMINESCENCE OF CU-DOPED ZNSE
HUANG, SM
NOZUE, Y
IGAKI, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L420 - L422
[3] BOUND-EXCITON AND EDGE-EMISSION SPECTRA ASSOCIATED WITH LI AND NA ACCEPTORS IN ZNSE
YAMADA, Y
KIDOGUCHI, I
TAGUCHI, T
HIRAKI, A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (05): : L837 - L840
[4] Bound-exciton and edge-emission spectra associated with Li and Na acceptors in ZnSe
Yamada, Yoichi, 1600, (28):
[5] BOUND-EXCITON TRANSFER AND PHOTOLUMINESCENCE UNDULATION SPECTRA FOR ACCEPTORS IN ZNTE
MONEMAR, B
MAGNEA, N
HOLTZ, PO
PHYSICAL REVIEW B, 1986, 33 (10): : 7375 - 7378
[6] BOUND-EXCITON LUMINESCENCE FROM HIGHLY DOPED SILICON
NISHINO, T
NAKAYAMA, H
HAMAKAWA, Y
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) : 1807 - 1808
[7] REABSORPTION KINETICS OF FREE-EXCITON AND BOUND-EXCITON LUMINESCENCE IN HIGH-PURITY N-GAAS
AOKI, K
YAMAMOTO, K
JOURNAL OF LUMINESCENCE, 1984, 31-2 (DEC) : 469 - 471
[8] GAAS VAPOR-GROWN BIPOLAR TRANSISTORS
NUESE, CJ
GOSSENBERGER, HF
ENSTROM, RE
DEAN, RH
GANNON, JJ
SOLID-STATE ELECTRONICS, 1972, 15 (01) : 81 - +
[9] BOUND-EXCITON LUMINESCENCE OF Cu-DOPED ZnSe.
Huang, Shi-Min
Nozue, Yasuo
Igaki, Kenzo
1600, (22):
[10] BOUND-EXCITON LUMINESCENCE AND ABSORPTION IN PHOSPHORUS-DOPED GERMANIUM
MAYER, AE
LIGHTOWLERS, EC
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (13): : L539 - L544

← 1 2 3 4 5 →