BOUND-EXCITON LUMINESCENCE ASSOCIATED WITH COBALT ACCEPTORS IN VAPOR-GROWN GAAS

被引：16

|

作者：

OZEKI, M

SHIBATOMI, A

OHKAWA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.326545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4823 / 4827

页数：5

相关论文

共 50 条

[41] AUTODOPING EFFECTS OF GE IN VAPOR-GROWN GAAS1-XPX LAYERS ON GE SUBSTRATES
KASANO, H
SOLID-STATE ELECTRONICS, 1973, 16 (08) : 913 - 920
[42] PHOTO-LUMINESCENCE SPECTRA FROM MULTIEXCITON COMPLEXES BOUND TO NEUTRAL ACCEPTORS IN GAAS
ALMASSY, RJ
REYNOLDS, DC
LITTON, CW
BAJAJ, KK
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 201 - 201
[43] DIATOMIC-COMPLEX DONOR AND ACCEPTOR MODEL FOR GE-DOPED VAPOR-GROWN GAAS
KASANO, H
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4021 - 4030
[44] Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy
Pozina, G
Bergman, JP
Paskova, T
Monemar, B
APPLIED PHYSICS LETTERS, 1999, 75 (26) : 4124 - 4126
[45] DONOR BOUND-EXCITON STRUCTURE OBSERVED BY PHOTOLUMINESCENCE IN VERY THIN GAAS IN0.11GA0.89AS GAAS SINGLE QUANTUM-WELLS
KIRBY, PB
CONSTABLE, JA
SMITH, RS
JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 517 - 518
[46] FINE-STRUCTURE OF LUMINESCENCE FROM EXCITONS AND MULTI-EXCITON COMPLEXES BOUND TO ACCEPTORS IN SI
THEWALT, MLW
PHYSICAL REVIEW LETTERS, 1977, 38 (09) : 521 - 524
[47] EXCITATION INTENSITY DEPENDENCE OF SHALLOW DONOR BOUND EXCITON LUMINESCENCE IN N-GAAS
VENGHAUS, H
JOURNAL OF LUMINESCENCE, 1978, 16 (03) : 331 - 341
[48] PHOTOEMISSION CHARACTERISTICS OF TRANSMISSION-MODE NEGATIVE ELECTRON AFFINITY GAAS AND (IN,GA) AS VAPOR-GROWN STRUCTURES
FISHER, DG
ENSTROM, RE
ESCHER, JS
GOSSENBERGER, HF
APPERT, JR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (10) : 641 - 649
[49] EFFECT OF GAS-PHASE STOICHIOMETRY ON MINORITY-CARRIER DIFFUSION LENGTH IN VAPOR-GROWN GAAS
ETTENBERG, M
OLSEN, GH
NUESE, CJ
APPLIED PHYSICS LETTERS, 1976, 29 (03) : 141 - 142
[50] STEADY-STATE LEVEL-ANTICROSSING SPECTRA FOR BOUND-EXCITON TRIPLETS ASSOCIATED WITH COMPLEX DEFECTS IN SEMICONDUCTORS
CHEN, WM
GODLEWSKI, M
MONEMAR, B
BERGMAN, JP
PHYSICAL REVIEW B, 1990, 41 (09): : 5746 - 5755

← 1 2 3 4 5 →