BOUND-EXCITON LUMINESCENCE OF Cu-DOPED ZnSe.

As an experimental approach to clarify the correlation between doped impurity and native defects, copper was doped at a low temperature to high-purity ZnSe crystals with controlled deviation from stoichiometry by a previous heat treatment under molten Zn or saturation pressure of Se. Photoluminescence was measured and examined as a function of deviation from stoichiometry. The site selection doping of Cu was achieved by controlling native defect concentrations. I//1**d**e**e**p lines are known to arise from acceptors of two different origins, V//Z//n and Cu//Z//n.