GROWTH OF HIGH-QUALITY GE FILMS ON SI(111) USING SB AS SURFACTANT

被引：25
|
作者：
LARSSON, MI
NI, WX
JOELSSON, K
HANSSON, GV
机构：
[1] Department of Physics and Measurement Technology, Linköping University
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期
关键词：
D O I：
10.1063/1.112067
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High quality, completely relaxed Ge films have been grown on Si(111) using Sb as surfactant at the initial stage of growth. After desorbing the surface Sb layer, cusplike reflection high-energy electron diffraction intensity oscillations indicated excellent Ge layer-by-layer epitaxy. High resolution x-ray diffraction analysis showed a very high crystalline quality and well resolved thickness fringes consistent with a flat relaxed Ge layer. Chemical preferential etching experiments revealed a defect density of down to approximately 3 X 10(4) cm-2.
引用
收藏
页码：1409 / 1411
页数：3
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