THE GROWTH OF GE ON A TE/SI(001) SURFACE - SURFACE CATALYTIC EPITAXY

被引：0
|
作者：
HIGUCHI, S
NAKANISHI, Y
机构：
[1] Tokyo Research Center, TOSOH Corporation, Ayase, Kanagawa, 252, 2743-1, Hayakawa
来源：
SURFACE SCIENCE | 1991年 / 254卷 / 1-3期
关键词：
D O I：
10.1016/0167-2584(91)90010-O
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The growth process in the initial deposition stage of Ge films on the Si(001) surface on which tellurium is adsorbed has been studied. The growth mode of Ge films is found to change into layered growth on a Te/Si(001) surface and tellurium moves on top of the Ge films and makes the Ge films higher in crystallinity. Thus tellurium operates as a catalyst not only to make Ge grow in a layer by layer mode on the Si substrate but also to make Ge films higher in crystallinity, i.e., surface catalytic epitaxy.
引用
收藏
页码：L465 / L468
页数：4
相关论文
共 50 条
  • [41] Atomic Structure of Ge Quantum Dots on the Si(001) Surface
    Arapkina, L. V.
    Yuryev, V. A.
    JETP LETTERS, 2010, 91 (06) : 281 - 285
  • [42] Study of Si and Ge growth on Si(100) surface
    Wang, Lei
    Tang, Jingchang
    Yang, Deren
    Wang, Xuesen
    Hu, Yanfang
    Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology, 2002, 22 (02): : 104 - 106
  • [43] Monte Carlo simulation of the surface structure of Ge on Si(001)
    Nurminen, L
    Tavazza, F
    Landau, DP
    Kuronen, A
    Kaski, K
    COMPUTER SIMULATION STUDIES IN CONDENSED-MATTER PHYSICS XV, 2003, 90 : 142 - 146
  • [44] STRUCTURE OF PURE Si-Si, Ge-Ge, AND MIXED Si-Ge ADDIMERS ON Si(001) SURFACE
    Afanasieva, T. V.
    Greenchuck, A. A.
    Koval, I. P.
    Nakhodkin, M. G.
    UKRAINIAN JOURNAL OF PHYSICS, 2011, 56 (03): : 240 - 247
  • [45] X-ray studies of Si/Ge/Si(001) epitaxial growth with Te as a surfactant
    Tinkham, BP
    Goodner, DM
    Walko, DA
    Bedzyk, MJ
    PHYSICAL REVIEW B, 2003, 67 (03):
  • [46] Observation of Ge surface segregation during Si-MBE on Ge/Si(001) probed by Si-H/Ge-H surface vibrations
    Kobayashi, Y.
    Sumitomo, K.
    Ogino, T.
    Surface Science, 1999, 427-428 : 229 - 234
  • [47] Observation of Ge surface segregation during Si-MBE on Ge/Si(001) probed by Si-H/Ge-H surface vibrations
    Kobayashi, Y
    Sumitomo, K
    Ogino, T
    SURFACE SCIENCE, 1999, 427-28 : 229 - 234
  • [48] Hydrogen induced Si surface segregation on Ge-covered Si(001)
    Rudkevich, E
    Liu, F
    Savage, DE
    Kuech, TF
    McCaughan, L
    Lagally, MG
    PHYSICAL REVIEW LETTERS, 1998, 81 (16) : 3467 - 3470
  • [49] First principles study of Ge/Si exchange mechanisms at the Si(001) surface
    Zipoli, F.
    Cereda, S.
    Ceriotti, M.
    Bernasconi, M.
    Miglio, Leo
    Montalenti, F.
    APPLIED PHYSICS LETTERS, 2008, 92 (19)
  • [50] Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping
    Park, J. -S.
    Curtin, M.
    Hydrick, J. M.
    Carroll, M.
    Fiorenza, J. G.
    Lochtefeld, A.
    Novak, S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (05): : 1740 - 1744
12345