THE GROWTH OF GE ON A TE/SI(001) SURFACE - SURFACE CATALYTIC EPITAXY

被引：0
|
作者：
HIGUCHI, S
NAKANISHI, Y
机构：
[1] Tokyo Research Center, TOSOH Corporation, Ayase, Kanagawa, 252, 2743-1, Hayakawa
来源：
SURFACE SCIENCE | 1991年 / 254卷 / 1-3期
关键词：
D O I：
10.1016/0167-2584(91)90010-O
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The growth process in the initial deposition stage of Ge films on the Si(001) surface on which tellurium is adsorbed has been studied. The growth mode of Ge films is found to change into layered growth on a Te/Si(001) surface and tellurium moves on top of the Ge films and makes the Ge films higher in crystallinity. Thus tellurium operates as a catalyst not only to make Ge grow in a layer by layer mode on the Si substrate but also to make Ge films higher in crystallinity, i.e., surface catalytic epitaxy.
引用
收藏
页码：L465 / L468
页数：4
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