THE GROWTH OF GE ON A TE/SI(001) SURFACE - SURFACE CATALYTIC EPITAXY

被引：0
|
作者：
HIGUCHI, S
NAKANISHI, Y
机构：
[1] Tokyo Research Center, TOSOH Corporation, Ayase, Kanagawa, 252, 2743-1, Hayakawa
来源：
SURFACE SCIENCE | 1991年 / 254卷 / 1-3期
关键词：
D O I：
10.1016/0167-2584(91)90010-O
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The growth process in the initial deposition stage of Ge films on the Si(001) surface on which tellurium is adsorbed has been studied. The growth mode of Ge films is found to change into layered growth on a Te/Si(001) surface and tellurium moves on top of the Ge films and makes the Ge films higher in crystallinity. Thus tellurium operates as a catalyst not only to make Ge grow in a layer by layer mode on the Si substrate but also to make Ge films higher in crystallinity, i.e., surface catalytic epitaxy.
引用
收藏
页码：L465 / L468
页数：4
相关论文
共 50 条
  • [1] GROWTH OF GE ON A TE ADSORBED SI(001) SURFACE
    HIGUCHI, S
    NAKANISHI, Y
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) : 4277 - 4285
  • [2] Ge-Si intermixing at the Ge/Si(001) surface
    Cho, JH
    Kang, MH
    PHYSICAL REVIEW B, 2000, 61 (03): : 1688 - 1691
  • [3] Mixed Ge-Si dimer growth at the Ge/Si(001)-(2 × 1) surface
    Patthey, L.
    Bullock, E.L.
    Abukawa, T.
    Kono, S.
    Johansson, L.S.O.
    Physical Review Letters, 1995, 75 (13):
  • [4] ANISOTROPY IN SURFACE MIGRATION OF SI AND GE ON SI(001)
    MO, YW
    LAGALLY, MG
    SURFACE SCIENCE, 1991, 248 (03) : 313 - 320
  • [5] GROWTH OF GE THIN-FILMS AND ISLANDS ON THE SI(001) SURFACE
    KHOR, KE
    DASSARMA, S
    PHYSICAL REVIEW B, 1994, 49 (19): : 13657 - 13662
  • [6] STRUCTURAL CHARACTERIZATION OF SI/GE SUPERLATTICES GROWN ON AN SI(001) SURFACE BY MOLECULAR-BEAM EPITAXY
    TAMAGAWA, T
    SHINTANI, T
    UEBA, H
    TATSUYAMA, C
    NAKAGAWA, K
    MIYAO, M
    THIN SOLID FILMS, 1994, 237 (1-2) : 282 - 290
  • [7] Morphology and optical properties of Ge nanocrystalline films grown by nonequilibrium epitaxy on Si (001) surface
    Lysenko, V. S.
    Kondratenko, S. V.
    Kozyrev, Yu. N.
    Kladko, V. P.
    Gudymenko, O. Yo.
    Strelchuk, V. V.
    Nikolenko, A. S.
    Kondratenko, O. S.
    Iliash, S. A.
    Pekar, G. S.
    THIN SOLID FILMS, 2018, 654 : 54 - 60
  • [8] Epitaxial growth of Ge thick layers on nominal and 6° off Si(001); Ge surface passivation by Si
    Hartmann, J. M.
    Abbadie, A.
    Cherkashin, N.
    Grampeix, H.
    Clavelier, L.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (05)
  • [9] Epitaxial growth of Ge thick layers on nominal and 6°off Si(001); Ge surface passivation by Si
    Hartmann, J. M.
    Grampeix, H.
    Clavelier, L.
    SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES, 2008, 16 (10): : 583 - 590
  • [10] MIXED GE-SI DIMER GROWTH AT THE GE/SI(001)-(2X1) SURFACE
    PATTHEY, L
    BULLOCK, EL
    ABUKAWA, T
    KONO, S
    JOHANSSON, LSO
    PHYSICAL REVIEW LETTERS, 1995, 75 (13) : 2538 - 2541
12345