Atomic Force Microscopy and Scanning Tunneling Microscopy of Aluminum Nanoislands

被引：0

作者：

Nedilko, S. ^{[1
]}

Prorok, V ^{[1
]}

Rozouvan, S. ^{[1
]}

机构：

[1] Taras Shevchenko Kiev Univ, Dept Phys, Glushkova 2, Kiev, Ukraine

来源：

NANO HYBRIDS AND COMPOSITES | 2012年 / 2卷

关键词：

aluminum nanoislands; scanning tunnelling microscopy; volt-ampere curves;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Aluminum nanoislands deposited on silicon substrate were studied by a scanning tunnelling microscopy technique. Measurements completed with spatial resolution up to 1 nm revealed a complex nanoisland structure- rhomboidally ordered near the border of the aluminum-silicon and porous structure in the island's upper parts. Volt-ampere curves demonstrated strong dependency from the film thickness and were interpreted as nanoscale effects. Kelvin probe microscopy was used for simultaneous aluminum-alumina and alumina-air surface scanning.

引用

页码：13 / 24

页数：12

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