ELECTRICAL ACTIVATION OF LOW-FLUENCE BORON IMPLANTATION IN SILICON STUDIED BY PCV IN COMBINATION WITH SIMS

被引：2
|
作者：
KEMPF, J
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 45卷 / 01期
关键词：
D O I：
10.1007/BF00618767
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：77 / 81
页数：5
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