ERBIUM LUMINESCENCE IN POROUS SILICON DOPED FROM SPIN-ON FILMS

被引：93

作者：

DOROFEEV, AM ^{[1
]}

GAPONENKO, NV ^{[1
]}

BONDARENKO, VP ^{[1
]}

BACHILO, EE ^{[1
]}

KAZUCHITS, NM ^{[1
]}

LESHOK, AA ^{[1
]}

TROYANOVA, GN ^{[1
]}

VOROSOV, NN ^{[1
]}

BORISENKO, VE ^{[1
]}

GNASER, H ^{[1
]}

BOCK, W ^{[1
]}

BECKER, P ^{[1
]}

OECHSNER, H ^{[1
]}

机构：

[1] UNIV KAISERSLAUTERN, INST OBERFLACHEN & SCHICHTANAL, D-67663 KAISERSLAUTERN, GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.358735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Erbium photoluminescence at room temperature and at 77 K has been observed from porous silicon doped with erbium from a spin-on silica gel film. Erbium incorporation into silicon dioxide at the surface of porous silicon and rapid thermal processing at temperatures higher than 1223 K were found to be a necessary prerequisite for erbium-related luminescence in porous silicon. No erbium diffusion into monocrystalline silicon from the spin-on films was observed. The depth-dependent erbium concentration in the bulk of porous silicon was determined by secondary-neutral- and secondary-ion-mass spectrometry depth profiling. The laterally resolved erbium distribution in the porous silicon was derived from energy-dispersive x-ray analysis. Possible mechanisms of erbium-related luminescence in porous silicon are discussed. © 1995 American Institute of Physics.

引用

页码：2679 / 2683

页数：5

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