Erbium and terbium luminescence from sol-gel derived In2O3 films on porous silicon

被引：0
|
作者：
Gaponenko, NV
Mudryi, AV
Sergeev, OV
Borisenko, VE
Pivin, JC
Baran, AS
Stepanova, EA
Ratko, AI
McGilp, JF
机构：
[1] Belarussian State Univ Informat & Radioelect, Minsk 220027, BELARUS
[2] Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France
[3] Byelarussian Acad Sci, Inst Gen & Inorgan Chem, Minsk 220027, BELARUS
[4] Univ Dublin Trinity Coll, Dublin 2, Ireland
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1998年 / 165卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(199801)165:1<131::AID-PSSA131>3.3.CO;2-C
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Sol-gel derived In2O3 films doped with erbium and terbium were fabricated on porous silicon and characterized by photoluminescence and means of Rutherford backscattering. The compositions coating porous silicon are considered as promising host materials for erbium and terbium optical activation. allowing to detect both visible and infrared luminescence from samples annealed at low temperatures.
引用
收藏
页码：131 / 134
页数：4
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