共 50 条
- [31] INVESTIGATIONS ON GAAS-GAALAS SINGLE-HETEROSTRUCTURE LIGHT EMITTING DIODES FOR OPTICAL COMMUNICATION SYSTEMS [J]. AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1975, 29 (12): : 489 - 492
- [33] MECHANISM OF CATASTROPHIC DEGRADATION IN InGaAsP/InP DOUBLE-HETEROSTRUCTURE LIGHT EMITTING DIODES AND GaAlAs DOUBLE-HETEROSTRUCTURE LIGHT EMITTING DIODES APPLIED WITH PULSED LARGE CURRENT. [J]. Journal of Applied Physics, 1982, 53 (12): : 9170 - 9179
- [37] DEFECT STUDY OF INAS/GAAS AND GAP/GAAS DOUBLE-HETEROSTRUCTURE [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, (134): : 369 - 372
- [38] THERMALLY INDUCED STRESSES IN STRIPE-GEOMETRY GAAS/GAALAS LASER-DIODES [J]. KVANTOVAYA ELEKTRONIKA, 1988, 15 (11): : 2291 - 2294
- [40] 5-W GAAS/GAALAS LASER-DIODES WITH A REACTIVE ION ETCHED FACET [J]. APPLIED PHYSICS LETTERS, 1990, 57 (18) : 1861 - 1863