DEVELOPMENT OF COPPER WIRE BONDING APPLICATION TECHNOLOGY

被引：68

作者：

TOYOZAWA, K ^{[1
]}

FUJITA, K ^{[1
]}

MINAMIDE, S ^{[1
]}

MAEDA, T ^{[1
]}

机构：

[1] SHARP CO LTD,VLSI DEV LABS INTEGRATED CIRCUITS GRP,TENRI,NARA,JAPAN

来源：

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1990年 / 13卷 / 04期

关键词：

D O I：

10.1109/33.62577

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Continuous forming of oxide-free, stable, spherical copper balls has been realized by blowing a reducing gas over the copper wire during copper ball formation (sparking). Chip damage resulting from hard copper wire, including underpad crack and silicon cratering, has been a major technical hurdle to copper wire bonding. These problems have all been overcome by introducing the double load wire bonding technology. Unlike the conventional wire bonding technology, the double load wire bonding technology can minimize chip damage from wire bonding stress because the bonding load is decreased during ultrasonic power oscillation. Also, it was confirmed that copper wires have a reliability equivalent to that of gold wires. The double load wire bonding technology has allowed us to use copper wires in MOS LSI devices on a commercial basis. © 1990 IEEE

引用

页码：667 / 672

页数：6

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