BORON DIFFUSION IN SILICON

被引：26

作者：

WILLIAMS, EL

机构：

来源：

关键词：

D O I：

10.1149/1.2428219

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：795 / 798

页数：4

共 50 条

[21] RETARDATION OF BORON-DIFFUSION IN SILICON
KIM, C
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) : 885 - 887
[22] Mechanism of the Diffusion of Boron in Silicon.
Panteleev, V.A.
Okulich, V.I.
Vasin, A.S.
Gusarov, V.A.
Neorganiceskie materialy, 1985, 21 (08): : 1253 - 1255
[23] BORON DIFFUSION INTO SILICON USING DIBORANE
HEYNES, MSR
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : C62 - &
[24] Effect of pressure on boron diffusion in silicon
Zhao, YC
Aziz, MJ
Mitha, S
Schiferl, D
DEFECTS IN ELECTRONIC MATERIALS II, 1997, 442 : 305 - 310
[25] BORON DIFFUSION INTO SILICON USING DIBORANE
HEYNES, MSR
ELECTROCHEMICAL TECHNOLOGY, 1967, 5 (1-2P): : 25 - +
[26] Modeling of boron diffusion in silicon carbide
Bracht, H
Stolwijk, NA
Laube, M
Pensl, G
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 327 - 330
[27] DIFFUSION CONSTANT OF BORON IN EPITAXIAL SILICON
RUDOLF, F
JACCARD, C
ROULET, M
HELVETICA PHYSICA ACTA, 1979, 52 (01): : 80 - 80
[28] BORON NITRIDE AS A DIFFUSION SOURCE FOR SILICON
GOLDSMITH, N
OLMSTEAD, J
SCOTT, J
RCA REVIEW, 1967, 28 (02): : 344 - +
[29] Modeling of boron diffusion in silicon carbide
Bracht, H.
Stolwijk, N.A.
Laube, M.
Pensl, G.
Materials Science Forum, 2001, 353-356 : 327 - 330
[30] ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON
ALLEN, WG
ANAND, KV
SOLID-STATE ELECTRONICS, 1971, 14 (05) : 397 - &